1 μm process : Products featuring 1.0 μm manufacturing process Wikipedia, the free encyclopedia

1 μm process

Semiconductor manufacturing process

Semiconductor device fabrication

MOSFET scaling (process nodes)
020 µm – 1968 010 µm – 1971 006 µm – 1974 003 µm – 1977 1.5 µm – 1981 001 µm – 1984 800 nm – 1987 600 nm – 1990 350 nm – 1993 250 nm – 1996 180 nm – 1999 130 nm – 2001 090 nm – 2003 065 nm – 2005 045 nm – 2007 032 nm – 2009 028 nm – 2010 022 nm – 2012 014 nm – 2014 010 nm – 2016 007 nm – 2018 005 nm – 2020 003 nm – 2022
Future 002 nm ~ 2024
Half-nodes Density CMOS Device (multi-gate) Moore's law Transistor count Semiconductor Industry Nanoelectronics
v t e

The 1 μm process (1 micrometre process) is a level of MOSFET semiconductor process technology that was commercialized around the 1984–1986 timeframe,^[1]^[2] by leading semiconductor companies like NTT, NEC, Intel and IBM. It was the first process where CMOS was common (as opposed to NMOS).

The earliest MOSFET with a 1 μm NMOS channel length was fabricated by a research team led by Robert H. Dennard, Hwa-Nien Yu and F.H. Gaensslen at the IBM T.J. Watson Research Center in 1974.^[3]

Products featuring 1.0 μm manufacturing process

NTT introduced the 1 μm process for its DRAM memory chips, including its 64k in 1979 and 256k in 1980.^[4]
NEC's 1 Mbit DRAM memory chip was manufactured with the 1 μm process in 1984.^[5]
Intel 80386 CPU launched in 1985 was manufactured using this process.^[1]
Intel uses this process on the CHMOS III-E technology.^[6]
Intel uses this process on the CHMOS IV technology.^[7]

References

^ ^a ^b Mueller, S (21 July 2006). "Microprocessors from 1971 to the Present". informIT. Archived from the original on 19 April 2015. Retrieved 11 May 2012.
^ Myslewski, R (15 November 2011). "Happy 40th birthday, Intel 4004!". TheRegister. Archived from the original on 19 April 2015. Retrieved 19 April 2015.
^ Dennard, Robert H.; Yu, Hwa-Nien; Gaensslen, F. H.; Rideout, V. L.; Bassous, E.; LeBlanc, A. R. (October 1974). "Design of ion-implanted MOSFET's with very small physical dimensions" (PDF). IEEE Journal of Solid-State Circuits. 9 (5): 256–268. Bibcode:1974IJSSC...9..256D. doi:10.1109/JSSC.1974.1050511. S2CID 283984.
^ Gealow, Jeffrey Carl (10 August 1990). "Impact of Processing Technology on DRAM Sense Amplifier Design" (PDF). Massachusetts Institute of Technology. pp. 149–166. Retrieved 25 June 2019 – via CORE.
^ "Memory". STOL (Semiconductor Technology Online). Retrieved 25 June 2019.
^ Intel Corporation, "New Product Focus: Components: Two-and Four-Megabit EPROMs are High-Density Performers", Microcomputer Solutions, September/October 1989, page 14
^ Intel Corporation, "New Product Focus: Components: New ASSP Suits Mobile Applications", Microcomputer Solutions, September/October 1990, page 11